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1

[IEEE Fifth International Conference on Solid-State and Integrated Circuit Technology-ICSICT'98 - Beijing, China (21-23 Oct. 1998)] 1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) - Fabrication and testing of integrated ferroelectric capacitors [non-volatile memories]

Yao Haiping,, Zhong Qi,, Jiang Guobao,, Huang Weining,, Hong Xiaojing,, Tang Tingao,

Year:

1998

Language:

english

File:

PDF, 201 KB

english, 1998

2

Wet chemical etching of lead zirconate titanate thin film for microelectro-mechanical systems applications

Lin, Yinyin, Liu, Qin, Tang, Tingao, Yao, Xi, Huang, Weining

Journal:

Year:

2001

Language:

english

File:

PDF, 647 KB

english, 2001

3

CONSTRAINTS AND RESOLUTION FOR PHASE CHANGE MATERIALS AND MEMORY DEVICE SCALING

YANG, HONG, YINYIN, LIN, YUN, LING, LIANZHANG, LAI, JIE, FENG, YUNFENG, LAI, BAOWEI, QIAO, TINGAO, TANG, BINGCHU, CAI, BOMY, CHEN

Journal:

Integrated Ferroelectrics

Year:

2006

Language:

english

File:

PDF, 925 KB

english, 2006

4

SPICE MODELING OF PHASE-CHANGE RESISTANCE IN PCM

YANG, HONG, YINYIN, LIN, TINGAO, TANG, BOMY, CHEN

Journal:

Integrated Ferroelectrics

Year:

2006

Language:

english

File:

PDF, 673 KB

english, 2006

5

[IEEE 2010 International Workshop on Junction Technology (IWJT) - Shanghai, China (2010.05.10-2010.05.11)] 2010 International Workshop on Junction Technology Extended Abstracts - An analytical model for the subthreshold swing of double-gate MOSFETs

Ding, Zhihao, Hu, Guangxi, Gu, Jinglun, Liu, Ran, Wang, Lingli, Tang, Tingao

Year:

2010

Language:

english

File:

PDF, 459 KB

english, 2010

6

A DESIGN OF FERRO-DFF FOR NONVOLATILE SYSTEMS

YAN, JIEFENG, LAI, LIANZHANG, BINGHANG, L V, TANG, TINGAO

Journal:

Integrated Ferroelectrics

Year:

2006

Language:

english

File:

PDF, 984 KB

english, 2006

7

A VERIFICATION OF NONVOLATILE PROGRAMMABLE LOGIC DEVICE

LI, YING, DING, YIQING, LIU, XIN, YAN, JIEFENG, LIN, YINYIN, TANG, TINGAO

Journal:

Integrated Ferroelectrics

Year:

2007

Language:

english

File:

PDF, 1.23 MB

english, 2007

8

MULTI-BIT STORAGE BASED ON CHALCOGENIDE THIN FILM TRANSISTOR FOR HIGH DENSITY NONVOLATILE MEMORY APPLICATION

CAI, YANFEI, ZHOU, PENG, TANG, TINGAO, GAO, CHARLES, LIN, YINYIN

Journal:

Integrated Ferroelectrics

Year:

2009

Language:

english

File:

PDF, 347 KB

english, 2009

9

[IEEE 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Shanghai, China (2006.10.23-2006.10.26)] 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings - Some solutions for writing current reduction and high density application of phase change memory

Lin, Yinyin, Feng, Jie, Cai, Yaifei, Lv, Hangbing, Liao, Feifei, Liu, Xin, Tang, Tingao, Qiao, Baowei, Lai, Yunfeng, Zhang, Yi, Cai, Bingchu, Chen, Bomy

Year:

2006

Language:

english

File:

PDF, 228 KB

english, 2006

10

Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs

Guanghui Mei, Peicheng Li, Guangxi Hu, Ran Liu, Lingli Wang, Tingao Tang

Journal:

Microelectronics Journal

Year:

2012

Language:

english

File:

PDF, 727 KB

english, 2012

11

Preparation of (100)-Oriented LaNiO 3 Oxide Electrodes for SrBi 2 Ta 2 O 9 -Based Ferroelectric Capacitors

Hu, Guangda, Tang, Tingao, Xu, Jianbin

Journal:

Japanese Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 543 KB

english, 2002

12

Characteristics of Si-Sb-Te Films for Phase Change Memory

Feng, Jie, ZHANG, Yin, Qiao, Baowei, Cai, Yanfei, Lin, Yinyin, Tang, Tingao, Cai, Bingchu, Chen, Bomy

Journal:

MRS Proceedings

Year:

2006

Language:

english

File:

PDF, 100 KB

english, 2006

13

[IEEE 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Xian, China (2012.10.29-2012.11.1)] 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology - Effective radius models of nanoscale elliptical Surrounding-Gate MOSFETs

Xiang, Ping, Hu, Guangxi, Mei, Guanghui, Liu, Ran, Wang, Lingli, Tang, Tingao

Year:

2012

Language:

english

File:

PDF, 346 KB

english, 2012

14

Performance improvement of CuxO resistive switching memory by surface modification

Hangbing Lv, Tingao Tang

Journal:

Applied Physics A: Materials Science & Processing

Year:

2011

Language:

english

File:

PDF, 571 KB

english, 2011

15

[IEEE 4th International Conference on Solid-State and IC Technology - Beijing, China (24-28 Oct. 1995)] Proceedings of 4th International Conference on Solid-State and IC Technology - Ultra-thin-film silicon-on-insulator structure using oxidized porous silicon

Aizhen Li,, Yiping Huang,, Sixun Zou,, Tingao Tang,, Kwor, R.

Year:

1995

Language:

english

File:

PDF, 180 KB

english, 1995

16

An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs

Zhihao Ding, Guangxi Hu, Jinglun Gu, Ran Liu, Lingli Wang, Tingao Tang

Journal:

Microelectronics Journal

Year:

2011

Language:

english

File:

PDF, 303 KB

english, 2011

17

A nano-scale-sized 3D element for phase change memories

Lv, Hangbing, Lin, Yinyin, Zhou, Peng, Tang, Tingao, Qiao, Baowei, Lai, Yunfeng, Feng, Jie, Chen, Bomy

Journal:

Semiconductor Science and Technology

Year:

2006

Language:

english

File:

PDF, 216 KB

english, 2006

18

Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETs

Peicheng Li, Guangxi Hu, Ran Liu, Tingao Tang

Journal:

Microelectronics Journal

Year:

2011

Language:

english

File:

PDF, 384 KB

english, 2011

19

[IEEE 2011 IEEE 9th International Conference on ASIC (ASICON 2011) - Xiamen, China (2011.10.25-2011.10.28)] 2011 9th IEEE International Conference on ASIC - Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs

Mei, Guanghui, Li, Peicheng, Hu, Guangxi, Liu, Ran, Tang, Tingao

Year:

2011

Language:

english

File:

PDF, 414 KB

english, 2011

20

An improved technology for fabrication of integrated Pb(Zr, Ti)O 3 ferroelectric capacitor

Whining, Huang, Yinyin, Lin, Tingao, Tang

Journal:

Year:

2001

Language:

english

File:

PDF, 497 KB

english, 2001

21

Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode

Lv, Hangbing, Wang, Ming, Wan, Haijun, Song, Yali, Luo, Wenjing, Zhou, Peng, Tang, Tingao, Lin, Yinyin, Huang, R., Song, S., Wu, J. G., Wu, H. M., Chi, M. H.

Journal:

Applied Physics Letters

Year:

2009

Language:

english

File:

PDF, 468 KB

english, 2009

22

Characterization of Ge2Sb2Te5 thin film transistor and its application in non-volatile memory

Feifei Liao, Yiqing Ding, Yinyin Lin, Tingao Tang, Baowei Qiao, Yunfeng Lai, Jie Feng, Bomy Chen

Journal:

Microelectronics Journal

Year:

2006

Language:

english

File:

PDF, 140 KB

english, 2006

23

Phase-Change Memory Device Using Si-Sb-Te Film for Low Power Operation and Multibit Storage

Baowei Qiao, Jie Feng, Yunfeng Lai, Yanfei Cai, Yinyin Lin, Tingao Tang, Bingchu Cai, Bomy Chen

Journal:

Journal of Electronic Materials

Year:

2007

Language:

english

File:

PDF, 259 KB

english, 2007

24

[IEEE 4th International Conference on Solid-State and IC Technology - Beijing, China (24-28 Oct. 1995)] Proceedings of 4th International Conference on Solid-State and IC Technology - A ferroelectric thin film capacitor C-V model

Zheng Chen,, Tingao Tang,

Year:

1995

Language:

english

File:

PDF, 171 KB

english, 1995

25

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - A threshold voltage model for the surrounding-gate MOSFETs

Mei, Guanghui, Hu, Guangxi, Li, Peicheng, Gu, Jinglun, Liu, Ran, Tang, Tingao

Year:

2010

Language:

english

File:

PDF, 417 KB

english, 2010

26

Electronic properties of GST for non-volatile memory

Hangbing Lv, Peng Zhou, Yinyin Lin, Tingao Tang, Baowei Qiao, Yunfeng Lai, Jie Feng, Bingchu Cai, Bomy Chen

Journal:

Microelectronics Journal

Year:

2006

Language:

english

File:

PDF, 163 KB

english, 2006

27

Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer

Lv, Hangbing, Wan, Haijun, Tang, Tingao

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 338 KB

english, 2010

28

[IEEE 2011 IEEE 9th International Conference on ASIC (ASICON 2011) - Xiamen, China (2011.10.25-2011.10.28)] 2011 9th IEEE International Conference on ASIC - Effects of unintended dopants on I–V characteristics of the double-gate MOSFETs, a simulation study

Peicheng Li,, Guanghui Mei,, Guangxi Hu,, Ran Liu,, Tingao Tang,

Year:

2011

Language:

english

File:

PDF, 658 KB

english, 2011

29

Effects of Si Doping on Phase Transition of Ge 2 Sb 2 Te 5 Films by in situ Resistance Measurements

Ling, Yun, Lin, Yinyin, Qiao, Baowei, Lai, Yunfeng, Feng, Jie, Tang, Tingao, Cai, Bingchu, Chen, Bomy

Journal:

Japanese Journal of Applied Physics

Year:

2006

Language:

english

File:

PDF, 105 KB

english, 2006

30

[IEEE 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Shanghai, China (2010.11.1-2010.11.4)] 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - An analytic threshold voltage model for the double-gate Schottky-Barrier source/drain MOSFETs

Li, Peicheng, Hu, Guangxi, Mei, Guanghui, Liu, Ran, Yi Jiang,, Tang, Tingao

Year:

2010

Language:

english

File:

PDF, 503 KB

english, 2010

31

[IEEE 2014 IEEE 12th International Conference on Solid -State and Integrated Circuit Technology (ICSICT) - Guilin, China (2014.10.28-2014.10.31)] 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) - Enhanced dielectric nonlinearity with controlled domain nucleation in ferroelectric thin films

Jiang, Anquan, Tang, Tingao

Year:

2014

Language:

english

File:

PDF, 740 KB

english, 2014

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